PART |
Description |
Maker |
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
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GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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MICROSEMI CORP-LOWELL Microsemi Corporation
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KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 VHF variable capacitance double diodes 甚高频双可变电容二极
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PHILIPS[Philips Semiconductors] Philipss NXP Semiconductors N.V.
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IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE) Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
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Integrated Device Technology, Inc.
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BBY39 BBY39_1 BBY39/T1 |
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller UHF variable capacitance diode(UHF 可变电容双二极管) UHF variable capacitance double diode From old datasheet system
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Philips Semiconductors Philipss NXP Semiconductors
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HVC383B |
20 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
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RENESAS[Renesas Electronics Corporation]
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RKV651KL |
31.25 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for FM tuner IC
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Renesas Electronics Corporation
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KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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